Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7942581 | Superlattices and Microstructures | 2014 | 7 Pages |
Abstract
We successfully integrated the high-performance oxide thin film transistors with novel IZO/IGZO dual-active-layers. The results showed that dual-active-layer (IZO/IGZO) TFTs, compared with single active layer IGZO TFTs and IZO TFTs, exhibited the excellent performances; specifically, a high field effect mobility of 14.4Â cm2/Vs, a suitable threshold voltage of 0.8Â V, a high on/off ratio of more than 107, a steep sub-threshold swing of 0.13Â V/dec, and a substantially small threshold voltage shift of 0.51Â V after temperature stress from 293Â K to 353Â K. In order to understand the superior performance, the density-of-states (DOS) were investigated based on the temperature-dependent transfer curves. The superior electric properties were attributed to the smaller DOS and higher carrier concentration. The proposed IZO/IGZO-TFT in this paper can be used as driving devices in the next-generation flat panel displays.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Xingwei Ding, Hao Zhang, He Ding, Jianhua Zhang, Chuanxin Huang, Weimin Shi, Jun Li, Xueyin Jiang, Zhilin Zhang,