Achieving high-performance PbS quantum dot solar cells by improving hole extraction through Ag doping

Schematic of (a) the control device structure showing the drawbacks of a high Fermi level in the PbS-EDT hole transporting layer, specifically decreased extent of the depletion region across the PbS-PbI2 and PbS-EDT interface. (b) the target device structure with a deeper, more p-type Fermi level extending the depletion region further into the PbS-PbI2 layer. These improvements in hole extraction due to incorporation of Ag in the PbS-EDT layer results in significantly improved device performance.138