Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7963055 | Journal of Nuclear Materials | 2018 | 18 Pages |
Abstract
The effect of Si concentration (0.2, 0.75 and 1.5â¯at.%) on properties of vacancy type defects formed under 5â¯MeV electron irradiation near 300â¯K in Fe-16â¯at.% Cr matrix has been studied by means of angular correlation of annihilation radiation technique. It is found that vacancy clusters are accumulated in Fe16Cr and Fe16Cr-0.2Si. Accumulation of monovacancies and their decoration with Si atoms are observed in Fe16Cr-1.5Si. Accumulation in Fe16Cr-0.75Si demonstrates transient features. Post-irradiation annealing kinetics in Fe16Cr and Fe16Cr-0.2Si differs from that in Fe16Cr-0.75Si and Fe16Cr-1.5Si. Annealing of vacancy clusters takes place in Fe16Cr and Fe16Cr-0.2Si, while vacancy clusters form and start annealing in Fe16Cr-0.75Si and Fe16Cr-1.5Si above 425â¯K. It is concluded that Si atoms aggregates are formed in Fe16Cr- 0.75Si and Fe16Cr-1.5Si under irradiation, which capture monovacancies and hold them up to 425â¯K. Mechanism of Si aggregate formation is discussed based on published data on interaction between vacancies and atoms of Si in Fe-Si alloys.
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Authors
Anatoly P. Druzhkov, Alexander L. Nikolaev,