Molecular dynamics simulation of C/Si ratio effect on the irradiation swelling of β-SiC

The C/Si atom ratio effect on the irradiation swelling of β-SiC is studied using molecular dynamics (MD) simulations. The irradiation swelling decreases with the increase of C/Si ratio under the same irradiation conditions. The carbon cluster is the key issue for the irradiation swelling of non-stoichiometric SiC. The carbon cluster size increases with the increase of C/Si ratio and the number of cluster decreases with the increase of C/Si ratio after irradiation process. An analytical model is established to describe the C/Si ratio effect on irradiation swelling and it fits the MD data well.