Role of interfaces on the trapping of He in 2D and 3D Cu-Nb nanocomposites

The role of interface structure on the trapping of He in Cu-Nb nanocomposites was investigated by comparing He bubble formation in nano-multilayers grown by PVD, nanolaminates fabricated by accumulative roll bonding (ARB), and 3D nanocomposites obtained by high pressure torsion (HPT). All samples were implanted with 1 MeV He ions at room temperature and characterized by cross section transmission electron microscopy (TEM). The critical He concentration leading to bubble formation was determined by correlating the He bubble depth distribution detected by TEM with the implanted He depth profile obtained by SRIM. The critical He dose per unit interfacial area for bubble formation was largest for the PVD multilayers, lower by a factor of ∼1.4 in the HPT nanocomposites annealed at 500 °C, and lower by a factor of ∼4.6 in the ARB nanolaminates relative to the PVD multilayers. The results indicate that the (111)FCC||(110)BCC Kurdjumov-Sachs (KS) interfaces predominant in PVD and annealed HPT samples provide more effective traps than the (112)KS interfaces predominant in ARB nanolaminates; however, the good trapping efficiency and high interface area of 3D HPT structures make them most attractive for applications.