Ordered arrangement of irradiation-induced defects of polycrystalline tungsten irradiated with low-energy hydrogen ions

Low-energy (20-520 eV) hydrogen ion irradiations were performed at W surface temperature of 373-1073 K and a fluence ranging from 5.0 × 1023 to 1.0 × 1025/m2. Conductive atomic force microscopy (CAFM) as a nondestructive analytical technique was successfully used to detect irradiation-induced defects in polycrystalline W. The size and density of these nanometer-sized defects were strongly dependent on the fluence of hydrogen ions. Both ion energy (E) and temperature (T) play a crucial role in determining the ordering of nanometer-sized defects. Ordered arrangements were formed at relatively high E and T. This can be attributed to the stress-driven ripple effect of defect growth at crystal grains, resulting in the movement of W lattice along one certain crystal planes.