Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7990337 | Journal of Alloys and Compounds | 2018 | 6 Pages |
Abstract
We report on the interface trap properties Al2O3/GaN vertical-type metal-oxide-semiconductor (MOS) capacitors homogeneously grown on GaN substrates with different surface treatments. The electrical and microstructure characteristics are analyzed with regard to the behaviors and natures of different trap states at and close to the MOS interface. It is shown that only acid cleaning could not effectively suppress the interface traps, while a following (NH4)2S passivation drastically reduce the interface state density to the detection limit of â¼1011â¯cmâ2eVâ1. At the same time, border traps and fixed charges located close to the MOS interface are also suppressed, leading to a neglecting electrical hysteresis and frequency dispersion in the capacitance-voltage measurement.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Xinke Liu, Yue Shen, Liwen Sang,