| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8012487 | Materials Letters | 2018 | 4 Pages |
Abstract
Bi0.89Ho0.08Sr0.03Fe0.97âaMn0.03NiaO3/Bi0.89Ho0.08Sr0.03Fe0.97âbMn0.03NibO3 (Nia/Nib) superlattice films were prepared via a CSD method. The influences of interface effects on ferroelectric properties and resistance switching behaviors of the superlattice films were investigated. There was a weak interface effect in the superlattice films, which was caused by the misfit dislocation generated at the interfaces between Nia and Nib. The results indicate that the superlattice films show superior ferroelectric properties and good resistance switching behaviors, which is caused by the interface effect. Those superlattice films may have potential applications in multifunctional devices due to their excellent electric properties.
Related Topics
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Authors
Meiyou Guo, Guoqiang Tan, Wei Yang, Long Lv, Mintao Xue, Yun Liu, Huijun Ren, Ao Xia,