Microwave dielectric properties of the novel low temperature fired Ni0.5Ti0.5NbO4 + xwt%BiVO4 (2.5 ≤ x ≤ 10) ceramics

The low temperature fired Ni0.5Ti0.5NbO4 + xwt%BiVO4 (2.5 ≤ x ≤ 10) ceramics were prepared through the solid state synthesis methods, effects of various contents of BiVO4 on different phases, microstructures and microwave dielectric properties for Ni0.5Ti0.5NbO4 were researched systematically. The sintering temperatures of Ni0.5Ti0.5NbO4 ceramics can be effectively decreased from 1100 °C to 900 °C by adding 10 wt% BiVO4 ceramics, and the sintering relative density over 96% could be prepared at 900 °C, meanwhile the temperature coefficient of the resonant frequency were decreased as the BiVO4 additions increased. Typically, preferred dielectric properties of Ni0.5Ti0.5NbO4 + 10 wt%BiVO4 composites with εr = 56.7, Q × f = 7062 GHz, τf = +55.59 ppm/°C were obtained when they were sintered at 900 °C.