Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8033165 | Thin Solid Films | 2018 | 4 Pages |
Abstract
In this work, the fabrication and characterization of fully solution-processed flexible Metal-Insulator-Semiconductor (MIS) diodes are presented. The MIS structure was fabricated using aluminum doped zinc oxide and spin-on glass as semiconductor and insulator, respectively. The maximum temperature used was 200 °C. The electrical characteristics of the flexible devices show a good agreement with the typical characteristics of a semiconductor diode even while bent to 5 mm tensile radius.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Miguel A. Dominguez, Jose A. Luna-Lopez, Sonia Ceron,