Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8033788 | Thin Solid Films | 2016 | 4 Pages |
Abstract
The device performance of amorphous In-Zn-O (a-IZO) thin-film transistors (TFTs) with printed Cu contacts was significantly improved by the insertion of a diffusion barrier Ta layer and rapid thermal process (RTP) annealing. Furnace-annealed a-IZO TFTs with Cu/Ta contacts exhibited mobility values of 21.3Â cm2/Vs, subthreshold gate swing (SS) values of 1.9 V/decade, and ION/OFF of ~Â 106. In contrast, the SS, mobility, and ION/OFF ratio of RTP-annealed a-IZO TFTs with Cu/Ta contacts were 30.6Â cm2/Vs, 0.68Â V/decade, and 3Â ÃÂ 107, respectively. We attributed the performance improvement of devices with Cu/Ta contacts to the suppression of Cu in-diffusion within the a-IZO channel due to the rapid heating associated with RTP annealing.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ju Yeon Won, Young Hun Han, Hyun Ju Seol, Ki June Lee, Rino Choi, Jae Kyeong Jeong,