Article ID Journal Published Year Pages File Type
8035209 Thin Solid Films 2014 4 Pages PDF
Abstract
The 2-MeV electron radiation damage of silicon-carbon source/drain (S/D) n-type metal oxide semiconductor field effect transistors with different carbon (C) concentrations is studied. Before irradiation, an enhancement of the electron mobility with C concentration of the S/D stressors is clearly observed. On the other hand, after electron irradiation, both the threshold voltage shift and the maximum electron mobility degradation are independent on the C concentration for all electron fluences studied. These results indicate that the strain induced electron mobility enhancement due to the C doping is retained after irradiation in the studied devices.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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