Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8035210 | Thin Solid Films | 2014 | 5 Pages |
Abstract
This study investigates the mechanical impacts of extended gate widths on the mobility gains of p-type MOSFETs. The selected MOSFET has a SiGe stressor embedded in its source and drain regions, as well as a compressive contact etch stop layer. Three-dimensional finite element simulation is performed to emulate the stress contour within the Si channel and estimate the related mobility gain. Sensitivity analyses of the simulation results using factorial designs and response surface methodology indicate that stresses within the Si channel are induced by a bending force determined by the extension of the poly width. A significant enhancement in mobility gain is found when an extended poly width combined with proper arrangements of the device geometry is applied.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Chang-Chun Lee, Chuan-Hsi Liu, Hung-Wen Hsu, Min-Hui Hung,