| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8037437 | Thin Solid Films | 2013 | 7 Pages |
Abstract
⺠Annealing Si-C nanolayers in quartz furnaces in N2 produces 5-14 nm thermal SiO2. ⺠Annealing Si-C films under Ar using graphitic carriers produces 1-2 nm SiOxCy. ⺠Capping the Si-C film with a-Si:H prevents oxidation of the Si-C film. ⺠After annealing, the a-Si:H is removed with the Si-C film fully intact.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Manuel Schnabel, Philipp Löper, Sebastian Gutsch, Peter R. Wilshaw, Stefan Janz,