Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8044196 | Vacuum | 2018 | 6 Pages |
Abstract
This paper reports the first-time evaluation of the time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with plasma enhanced chemical vapor deposition (PECVD) SiO2 gate oxide. The interface fixed charge density and oxide bulk charge density extracted from the flat-band voltage characteristics were 2.7â¯Ãâ¯1011 ± 6.54â¯Ãâ¯1010â¯cmâ2 and -9.71â¯Ãâ¯1017 ± 5.18â¯Ãâ¯1016â¯cmâ3, respectively. The time dependent dielectric breakdown (TDDB) characteristics exhibited longer lifetime estimation as the SiO2 thickness increased. The excellent reliability of the PECVD SiO2 film was validated for use as the gate oxide of recessed AlGaN/GaN MOS-HFET.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Hyun-Seop Kim, Su-Keun Eom, Kwang-Seok Seo, Hyungtak Kim, Ho-Young Cha,