Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
812243 | Materials Today | 2014 | 10 Pages |
Abstract
Carbon nanotubes (CNTs) are quasi-one-dimensional materials with unique properties and are ideal materials for applications in electronic devices. Significant progress has been made on CNT electronics, and a doping-free approach has emerged from this research. This approach utilizes the contact control on the properties of field-effect transistors (FETs), preserving the perfect lattice of the CNT making it possible for CNT FETs to outperform state-of-the-art Si devices. Both n-type and p-type CNT FETs with near ballistic performance limits have been fabricated, symmetric CMOS devices have been demonstrated, and pass-transistor-logic, a circuit configuration that is more efficient than CMOS is being explored.
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Lian-Mao Peng, Zhiyong Zhang, Sheng Wang,