Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8148050 | Current Applied Physics | 2018 | 18 Pages |
Abstract
We report the fabrication of single-walled carbon nanotube (SWCNT) network transistors by ferroelectric Pb(Zr0.4Ti0.6)O3 (PZT) bottom-gating and investigate the polarization effects of PZT on the transport properties of the transistor device. Our devices exhibit typical p-channel transistor characteristics and a large hysteresis loop with high ON/OFF current ratio and large ON current as well as memory window (MW) measured up to 5.2Â V. The origin of clockwise hysteresis is attributed to ferroelectric polarization modulated charge trapping/de-trapping process in the interface states between SWCNT networks and PZT. The retention time about 104s with two high stable current states preliminarily demonstrates great potential for future non-volatile memory applications based on such SWCNT/PZT hybrid systems.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yilin Sun, Dan Xie, Ruixuan Dai, Mengxing Sun, Weiwei Li, Tianling Ren,