Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8152015 | Journal of Crystal Growth | 2013 | 5 Pages |
Abstract
Epitaxial layers on a 150-mm-diameter silicon carbide wafer have been grown using a horizontal hot-wall chemical vapor deposition system for three 150-mm-diameter wafers. We investigated the surface morphology and surface defects such as shallow pits and triangular defects of the grown epitaxial layers, as well as the thickness and carrier concentration uniformities. The shallow pit and triangular defect densities were 4.6Â cmâ2 and 1.6Â cmâ2, respectively, and the thickness and the carrier concentration uniformities were 3.9% and 47%, respectively. We focused on improving the carrier concentration distribution for practical use and concluded that the cause of the distribution was the distribution in the effective C/Si ratio in the direction of the gas flow.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Keiko Masumoto, Chiaki Kudou, Kentaro Tamura, Johji Nishio, Sachiko Ito, Kazutoshi Kojima, Toshiyuki Ohno, Hajime Okumura,