Electron states and electron Raman scattering in an asymmetrical double quantum well: External electric field

In this paper studies an electron Raman scattering process for a semiconductor, coupled and asymmetrical double quantum well. Then, the presence of an electron in a single conduction band is considered. In addition, the system is subjected to an external electric field. To carry out this study, the net Raman gain and the differential cross section are calculated. The emission spectra are interpreted and discussed. For this, we obtain the exact solutions of the electron states considering the envelope function approximation and a single parabolic conduction band, which is split into a sub-bands system due to confinement. Furthermore, the effect of the electric field on the electron states and in the differential cross section is studied. To illustrate our findings, we have considered a system growing in a GaAs/AlxGa1−xAs matrix.