Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8160662 | Physica B: Condensed Matter | 2018 | 5 Pages |
Abstract
The influence of the annealing temperatures and cooling rates of n-silicon crystals, grown by the Czochralski method and doped with phosphorus impurity, on their electric and thermoelectric properties was studied. In the region of predominantly impurity scattering a more essential dependence of the charge carrier mobility on the cooling conditions of crystals was established in comparison with the dependence on the annealing temperature. The analysis of the measurement results of tensoresistance and tenso-thermo-emf was carried out, on the basis of which the dependence of the anisotropy parameter of drag thermo-emf on the cooling rate was obtained. The feature of the anisotropy parameter of thermo-emf M in the form of its maximal deviation from the linear dependence M=M(lg(Ï
cl)) was revealed in the region of cooling rates from 8 to 15â¯K/min.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
G.P. Gaidar, P.I. Baranskii,