| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8168565 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2016 | 5 Pages |
Abstract
Aiming at low energy X-ray imaging, a prototype chip based on Double-SOI process was designed and tested. The sensor and pixel circuit were characterized. The long lasting crosstalk issue in SOI technology was understood. The operation of pixel was verified with a pulsed infrared laser beam. The depletion of sensor revealed by signal amplitudes is consistent with the one revealed by I-V curve. An s-curve fitting resulted in a sigma of 153 eâ among which equivalent noise charge (ENC) contributed 113 eâ. It's the first time that the crosstalk issue in SOI technology was solved and a counting type SOI pixel demonstrated the detection of low energy radiation quantitatively.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Yunpeng Lu, Qun Ouyang, Yasuo Arai, Yi Liu, Zhigang Wu, Yang Zhou,