Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8172365 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2015 | 5 Pages |
Abstract
The charge-trapping effect in compound semiconductor γ-ray detectors in the presence of a uniform electric field is commonly described by Hecht׳s relation. However, Hecht׳s relation ignores the geometrical spread of charge carriers caused by the finite range of primary and secondary electrons (δ-rays) in the detector. In this paper, a method based on the Shockley-Ramo theorem is developed to calculate γ-ray induced charge pulses by taking into account the charge-trapping effect associated with the geometrical spread of charge carriers. The method is then used to calculate the response of a planar CdTe detector to energetic γ-rays by which the influence of electron track lengths on the γ-ray response of the detectors is clearly shown.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
M. Nakhostin, A. Esmaili-Torshabi,