| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9675974 | Colloids and Surfaces A: Physicochemical and Engineering Aspects | 2005 | 4 Pages |
Abstract
The local oxidation on Si substrate has been studied by atomic force microscope lithography. Heights of protruded patterns were changed during the lithographic process with thin films of 2-amino-6-methoxybenzothiazole-azo (MBT-A) and 2-amino-6-methoxybenzothiazol-azo-Ni ([MBT-A]2Ni2+) on Si substrates. The current-value in a tip-sample junction was investigated by using scanning tunneling spectroscopy with a contact mode atomic force microscope (AFM), and it was confirmed that a change of current-values depends on applied voltages. The difference of potential barrier between [MBT-A]2Ni2+ and MBT-A was also confirmed by using UV-vis spectrophotometry and ultraviolet photoelectron spectroscopy. The tunneling current value of a [MBT-A]2Ni2+ film was larger than that of MBT-A film and the difference from threshold voltages was also observed.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Colloid and Surface Chemistry
Authors
Jeong Oh Kim, Wansup Shin, Hyeyoung Park, Haiwon Lee,