| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9697409 | Diamond and Related Materials | 2005 | 5 Pages |
Abstract
Variations of growth parameters such as pressure and substrate temperature result in different compressive stress values between 0 and 390 MPa. The possibility to control and adjust the absolute value of the stress inside the diamond film with respect to the silicon substrate allows to use the built-in stress as design parameter of MEMS devices and engineer for example bistable membrane configurations.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
F.J. Hernández Guillén, Klemens Janischowsky, Joachim Kusterer, Wolfgang Ebert, Erhard Kohn,