| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9697410 | Diamond and Related Materials | 2005 | 5 Pages |
Abstract
A new type of highly rectifying diamond heterostructure diode is demonstrated. The p-type doped part of the diode consists of a single crystal diamond, the n-type part of a nitrogen doped ultra-nano-crystalline diamond (UNCD) layer. IV-measurements show 8 orders of magnitude of rectification (±10 V) at room temperature. The barrier behavior is rather complex and can be described by two junctions acting in parallel, reflecting the UNCD properties. This new material system displays an extraordinary thermal stability and has been tested successfully up to 1050 °C in vacuum. Thus, this novel diamond heterostructure diode belongs to the few ultrahigh temperature stable electronic devices.
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Authors
T. Zimmermann, M. Kubovic, A. Denisenko, K. Janischowsky, O.A. Williams, D.M. Gruen, E. Kohn,