A new structure of C60/AlN high performance field effect transistor

A new structure for high performance C60/AlN field effect transistor (FET) has been proposed to form an excellent interface between the C60 and the insulator layers. In this paper, we have first successfully achieved to fabricate the new C60/AlN FET structure and have investigated on the drain current versus source-drain voltage (ID-VSD) characteristics of the new C60 FET. It has been revealed by the C60 growth experiments that the grain size in the solid C60 layers grown on the AlN layers was larger than that on the conventional SiO2 layers. A typical ID-VSD curve of the proposed FET consists of the hopping, the linear and the saturation regions as similar to that of the conventional C60/SiO2 FET. The electron mobility estimated from the analysis on the linear and/or the saturation regions of the ID-VSD curves increases with the grain size. On the other hand, in the hopping region below the threshold VSD, the activation energy for the hopping of the carrier decreases with the grain size. The experimental results strongly indicate that the proposed new C60/AlN FET structure has a large potential to realize the high performance C60 FETs.