{111}-oriented diamond films and p/n junctions grown on B-doped type Ib substrates

n- And p-type diamond single layers, as well as n/p junctions, were grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) on {111}-oriented Ib-type diamond substrates. The dependence of the solid-state incorporation of phosphorus and boron doping atoms on their gas phase concentrations were evaluated by secondary ion mass spectroscopy (SIMS) and cathodoluminescence (CL), respectively. At room temperature, the I(V) characteristics of the p/n junctions yielded a rectification ratio reaching 2×1010 at ±25 V. Defect-related visible green electroluminescence (EL) peaks were also observed for a forward bias in excess of 25 V.