Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9697464 | Diamond and Related Materials | 2005 | 7 Pages |
Abstract
Device characteristics of thermal CVD grown carbon nanotubes (CNTs) field emitters in diode and triode configurations are reported. The CNT cathode configured as field emission diode exhibited a low turn-on field of â¼3.0 V/μm, high emission current of â¼35 mA at â¼5.0 V/μm, and excellent current stability. Large signal model (dc) and small signal model (ac) of the field emission diode were also investigated. The CNT triode was achieved by integrating a TEM grid (transmission electron microscope specimen holder) as the gate electrode to the CNT cathode, with no further micro-fabrication processes needed. The CNT triode displayed gate-controlled current modulation behavior with distinct cutoff, linear and saturation regions. The triode has a gate turn-on field of â¼5.4 V/μm despite a large cathode-gate spacing of â¼120 μm. The field emission data established the basic transistor characteristics of CNT emitters in a triode amplifier configuration with good gain. The detailed dc characteristics and transistor ac parameters such as transconductance, amplification factor, and anode resistance for the CNT triode were investigated and modeled.
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Authors
Y.M. Wong, W.P. Kang, J.L. Davidson, W. Hofmeister, S. Wei, J.H. Huang,