| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9697465 | Diamond and Related Materials | 2005 | 5 Pages |
Abstract
Thermal activation of field enhancement based emitters can provide efficient means of lowering the emission barrier, thus enabling high current density electron sources. Microwave plasma assisted chemical vapour deposition was employed to synthesize sulfur doped nanocrystalline diamond films with various sulfur/carbon concentrations. Electron emission at elevated temperatures was characterized by direct imaging of the emission utilizing electron emission microscopy. Sulfur doped nanocrystalline diamond films exhibit electron emission from singular sites indicating a non-uniform distribution of the local field enhancement. The threshold field for electron emission changes significantly by varying the sulfur/carbon concentration in the gas phase. At elevated temperatures the emission is strongly enhanced but remains confined to the intense emission sites.
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Authors
F.A.M. Köck, J.M. Garguilo, R.J. Nemanich,