Article ID Journal Published Year Pages File Type
9700816 Sensors and Actuators B: Chemical 2005 5 Pages PDF
Abstract
An ISFET fabricated by an unmodified, commercial CMOS process displays significant threshold voltage drift, which is attributed to the diffusion of hydrogen ions into the passivation layer. A 'stretched-exponential' model can compensate for the drift and produce a useful device with a sensitivity of 48 mV/pH. The CMOS ISFET has been used to create a complete 'system-on-chip' digital pH meter, capable of real-time drift compensation.
Related Topics
Physical Sciences and Engineering Chemistry Analytical Chemistry
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