Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9700816 | Sensors and Actuators B: Chemical | 2005 | 5 Pages |
Abstract
An ISFET fabricated by an unmodified, commercial CMOS process displays significant threshold voltage drift, which is attributed to the diffusion of hydrogen ions into the passivation layer. A 'stretched-exponential' model can compensate for the drift and produce a useful device with a sensitivity of 48âmV/pH. The CMOS ISFET has been used to create a complete 'system-on-chip' digital pH meter, capable of real-time drift compensation.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Analytical Chemistry
Authors
P.A. Hammond, D.R. S. Cumming,