Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches

•We use the two-dimensional, time-dependent, Wigner MC method.•We simulate the evolution of a Gaussian wave packet moving in a realistic channel potential.•We include the kernel of a scattering center in the channel.•We compare the Wigner results with the Boltzmann results.

We present a numerical study of the evolution of a wave packet in a nanoscale MOSFET featuring an ‘atomistic’ channel doping. Our two-dimensional Monte Carlo Wigner simulation results are compared against classical Boltzmann simulation results. We show that the quantum effects due to the presence of a scattering center are manifestly non-local affecting the wave propagation much farther than the geometric limit of the center. In particular the part of the channel close to the oxide interface remains blocked for transport, in contrast to the behavior predicted by classical Boltzmann propagation.