Applicability of the Meyer-Neldel rule in a-Se90Ge10−xInx thin films in presence of light

Temperature dependence of conductivity is measured in dark as well as in presence of light in amorphous thin films of Se90Ge10−xInx in the temperature range 285-365 K and in the intensity range 6400-10 750 lx. It is observed that pre-exponential factor (σ0) depends on activation energy (ΔE). A straight line between lnσ0 and ΔE indicates the presence of MN rule in dark as well as in presence of light. A strong correlation between MN conductivity pre-factor σ00 and characteristic energy kT0 has also been observed. The origin of this correlation and the MN rule can be attributed to the effect of the exponential energy distribution of defect traps.