Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9783924 | Materials Science and Engineering: B | 2005 | 5 Pages |
Abstract
Boron interstitial clusters (BICs) are known to hinder the activation of typical boron implants reducing the level of activation even below solid solubility. This paper reports on an optimised vacancy engineering technique to reduce the interstitial population, which would normally occur after ion implantation. Hence, the BIC formation is suppressed creating a highly active layer, which remains active over a 700-1000 °C temperature window. Using this technique, it has been estimated that at 700 °C the level of activation may be around 5 Ã 1020 cmâ3 rivaling techniques such pre-amorphisation combined with solid phase epitaxy re-growth.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A.J. Smith, B. Colombeau, R. Gwilliam, N.E.B. Cowern, B.J. Sealy, M. Milosavljevic, E. Collart, S. Gennaro, M. Bersani, M. Barozzi,