| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9783956 | Materials Science and Engineering: B | 2005 | 5 Pages |
Abstract
It is concluded that the shallow trench isolation (STI) induced stress and the cobalt silicide formation concur to produce a junction leakage current increase by creating a deep level in silicon located close to midgap. This level can possibly identified with a level ascribed to a point defect excess.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
D. Codegoni, G.P. Carnevale, C. De Marco, I. Mica, M.L. Polignano,