Characterization of a high-density plasma immersion ion implanter with scaleable ECR large-area plasma source

Since hydrogen implantation requiring high dose often results in blistering of the wafer surface, a new Smart-Cut™-like technology has been suggested (US Patent 6,352,909) where the one-step hydrogen implantation is replaced by a two-step process. The designed ECR-PIII can offer substantial advantage in providing the high yield of protons used for the micro-bubble formation in the two-step process.