| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9812397 | Thin Solid Films | 2005 | 6 Pages |
Abstract
Short channel effects have been investigated in n-channel polysilicon thin film transistors. Transconductance degradation has been observed when reducing the channel length L and this effect has been explained with the presence of a parasitic resistance related to residual implant damage. Threshold voltage slighlty decreases for channel length around L=1 μm and simulations confirm that the roll-off of the threshold voltage is expected for L<1 μm. In the output characteristics a stronger kink effect has been observed at short L which, from a comprehensive analysis of the current components, can be attributed to an enhanced parasitic bipolar transistor action.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
G. Fortunato, A. Valletta, P. Gaucci, L. Mariucci, S.D. Brotherton,