Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812418 | Thin Solid Films | 2005 | 4 Pages |
Abstract
The behavior of a model for non-volatile electronic memory devices is discussed. The resistance switching mechanism that gives place to the memory effect is due to an effective doping driven transition in small domains at the interface.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M.J. Rozenberg, I.H. Inoue, M.J. Sánchez,