Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812602 | Thin Solid Films | 2005 | 5 Pages |
Abstract
Single junction p-i-n μc-Si:H solar cells were prepared in a low-cost, large-area single chamber radio frequency plasma enhanced chemical vapor deposition system. The effects of seeding processes on the growth of μc-Si:H i-layers and performance of μc-Si:H solar cells were investigated. Seeding processes, usually featured by highly hydrogen rich plasma, are effective in inducing the growth of μc-Si:H i-layers. It has been demonstrated that p-layer seeding methods are preferable to i-layer seeding. While performance of μc-Si:H solar cells produced by i-layer seeding methods was usually limited by very low fill factors, μc-Si:H solar cells with good initial and stabilized conversion efficiencies were obtained by p-layer seeding.
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Authors
Yuan-Min Li, Liwei Li, J.A. Anna Selvan, Alan E. Delahoy, Roland A. Levy,