The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2

Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of Ge quantum dots in Ge-implanted SiO2. Ge ion doses were up to 1017/cm2, and subsequent annealing temperatures up to Ta = 1000 °C. Results suggest that ordered and correlated Ge QDs can be achieved by high-dose implantation followed by medium-T annealing.