| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9817754 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 5 Pages |
Abstract
Interactions of polyatomic ion beams with silicon (Si) surfaces were investigated by utilizing the ellipsometry measurement. It was found that the damaged layer thickness irradiated by the polyatomic ions with a mass number of about 40 was smaller than that by Ar ion irradiation at the same incident energy and ion fluence. The result indicated that the rupture of polyatomic ions occurred upon its impact on the Si surface with an incident energy larger than a few keV. In addition, the chemical modification of Si surfaces such as wettability could be achieved by adjusting the incident energy for the ethanol ions, which included all the fragment ions.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
G.H. Takaoka, Y. Nishida, T. Yamamoto, M. Kawashita,