Reliability study of bulk and SOI SRAMs using high energy nuclear probes

The reliability of the bulk and SOI SRAMs was investigated using high energy proton probes with energies of 300-800 keV and operating voltages of 1.5-1.9 V. The soft and hard errors did not occur in the SOI and bulk SRAMs with a proton probe energy of 300 keV. The soft errors in the SOI SRAMs with a body-tie structure occurred with a proton probe energies of more than 350 keV. On the contrary, less soft errors in bulk SRAMs occurred with proton probe energies of 350-800 keV, but many hard errors occurred in the control circuits. The SER in the SOI SRAM depends on the generated excess carriers in the SOI body by proton probe irradiation. The soft errors in SOI SRAMs are suppressed by a higher operating voltage at and near the normal operating voltage.