Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10147635 | Journal of Nuclear Materials | 2018 | 17 Pages |
Abstract
We have investigated the structural and electronic properties of oxides of Th, U and Pu using GGA + U method. Structure of these oxides is of cubic nature and they have indirect band gaps of 4.34 eV along MâR (ThO2), 2.30â¯eV along ÎâR (UO2) and 2.27â¯eV along MâR (PuO2). The density of states (DOS) of these oxides shows main contribution of 2p orbital in valence band maxima (VBM) of ThO2 and PuO2 while in UO2 5f orbital contributes mainly in VBM. We also investigated the optical properties of these oxides and found that static dielectric function increases from ThO2 to PuO2.
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Physical Sciences and Engineering
Energy
Nuclear Energy and Engineering
Authors
Shilpa Singh, Sanjeev K. Gupta, Yogesh Sonvane, K.A. Nekrasov, A. Ya Kupryazhkin, P.N. Gajjar,