Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10364464 | Microelectronics Journal | 2011 | 6 Pages |
Abstract
We present a monostable-bistable transition logic element (MOBILE) based on the negative-differential-resistance (NDR) circuit. In particular, this circuit can be completely implemented using the standard BiCMOS process. A traditional MOBILE using two resonant tunneling diodes (RTD) connected in series is a functional logic circuit. The fabrication of RTD is utilized in the complicated molecular-beam-epitaxy (MBE) system. However, we present a MOBILE circuit that is completely made of standard Si-based metal-oxide-semiconductor field effect transistors and SiGe-based heterojunction bipolar transistors. By suitably determining the control voltages and input conditions, we can obtain the operation of the inverter, AND and OR logic gates. We also demonstrate the latch characteristic of this MOBILE circuit. This logic circuit is fabricated using the standard 0.35 μm BiCMOS process without the need for the MBE system.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Kwang-Jow Gan, Cher-Shiung Tsai, Yu-Kuang Li, Jeng-Jong Lu,