| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10364885 | Microelectronics Journal | 2013 | 6 Pages |
Abstract
⺠An improved VBIC model for InGaP/GaAs HBTs is developed. ⺠Novel current expression is proposed by considering the heterojunction effect. ⺠Collector capacitance and transit time are improved with dependence on biases. ⺠Corresponding extraction procedure is proposed. ⺠Model is verified by the DC, AC and power measurements.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Yuxia Shi, Yan Wang,