| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10364887 | Microelectronics Journal | 2013 | 8 Pages |
Abstract
In this paper, we investigate the read operation of memristor-based memories. We analyze the sneak paths problem and provide a noise margin metric to compare the various solutions proposed in the literature. We also analyze the power consumption associated with these solutions. Moreover, we study the effect of the aspect ratio of the memory array on the sneak paths. Finally, we introduce a new technique for solving the sneak paths problem by gating the memory cell using a three-terminal memistor device.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Mohammed Affan Zidan, Hossam Aly Hassan Fahmy, Muhammad Mustafa Hussain, Khaled Nabil Salama,