| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10365504 | Microelectronics Journal | 2005 | 4 Pages |
Abstract
The high purity ZnO ceramic target and the (MgO)0.1(ZnO)0.9 target were fabricated. The wurtzite-phase ZnO thin film and ternary MgxZn1âxO thin film were grown on sapphire (0001) substrates by laser molecular beam epitaxy (L-MBE) from the sintered ceramic targets separately. The films' transmittance spectra at room temperature for the ZnO film and the MgxZn1âxO film were measured and compared while their room temperature photoluminescence spectra were done. The band-gap modulation is realized from 3.31Â eV for the ZnO film to 3.64Â eV for the MgxZn1âxO alloy film. The Mg content x in the MgxZn1âxO alloy film was determined to be 0.18.
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Hardware and Architecture
Authors
Yong-ning He, Jing-wen Zhang, Xiao-dong Yang, Qing-an Xu, Xing-hui Liu, Chang-chun Zhu, Xun Hou,