Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10365667 | Microelectronics Reliability | 2014 | 6 Pages |
Abstract
The on-state gate current of AlGaN/GaN HEMTs flows from the gate edge of the drain side to the AlGaN barrier..
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Hajime Sasaki, Kaoru Kadoiwa, Hidetoshi Koyama, Yoshitaka Kamo, Yoshitsugu Yamamoto, Toshiyuki Oishi, Kazuo Hayashi,