Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10365683 | Microelectronics Reliability | 2014 | 7 Pages |
Abstract
The influence of 8Â MeV electron beam bombardment on room temperature grown nanocluster carbon using cathodic arc process has been studied here. Atomic force microscopy (AFM) study shows that surface roughness varies with varying electron doses. High doses of electrons could causes thermal induce graphitization and morphological changes in the films. Raman spectroscopy analysis reveals that G-peak vary from 1555Â cmâ1 to 1570Â cmâ1 and D-peak varying from 1361Â cmâ1 to 1365Â cmâ1 indicating the disorderness and presence of both graphitic and diamond-like phases. Room temperature conductivity changes by two to three orders in magnitude. The conductivity in the films could be due to conduction of charge carriers through neighboring islands of conductive chains. Defect states calculated using the differential technique varies from 8Â ÃÂ 1017cmâ3Â eVâ1 to 1.5Â ÃÂ 1019Â cmâ3Â eVâ1. Irradiation of nanocluster carbon thin films could be helpful to tune the electrical properties and defect densities of the nanocluster carbon films for various large area, flexible electronic and nano electronic applications.
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Authors
Shounak De, B.S. Satyanarayana, Ganesh Sanjeev, K. Ramakrishna, Mohan Rao K., Manjunatha Pattabi,