| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10365688 | Microelectronics Reliability | 2014 | 7 Pages |
Abstract
An analytical model of transient latch-up in CMOS transmission gate induced by laser is established. The time-dependent current characteristics of the parasitic silicon controlled rectifier (SCR) under different injected photocurrent are illustrated. The model analyzes the trigger conditions for latch-up and describes the dynamic process varying with time. The photocurrent threshold causing latch-up under different pulse widths and repetition frequencies is obtained, which agrees well with the experimental results reported in the literature.
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Computer Science
Hardware and Architecture
Authors
Weicheng Qiu, Xiang-Ai Cheng, Rui Wang, Zhongjie Xu, Chao Shen,