| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10365689 | Microelectronics Reliability | 2014 | 6 Pages |
Abstract
In this paper, the failure modes of a 60Â V power UMOSFET firstly have been discussed by analyzing the test data of the die, and our hypothesis is that the merger of the P-base regions under the trench leads to larger on-resistance and threshold voltage of 60Â V UMOSFET. To further verify the hypothesis, the formula for the resistance of the drift region has been derived, and the simulating model of UMOSFET has been given with various mergers of the P-base regions. Then the simulation model has been corrected and the parameters of UMOSFET have been optimized. The re-design of 60Â V UMOSFET has been taped out successfully, with its electric parameters totally meeting the requirements.
Related Topics
Physical Sciences and Engineering
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Hardware and Architecture
Authors
Wang Debo, Feng Quanyuan, Chen Xiaopei, Jin Tao,